E-book Particulars :
Language English
Pages 358
Format PDF
Measurement 40.2 MB

 

Integrated Power Devices and TCAD Simulation


 

Integrated Power Devices and TCAD Simulation Devices, Circuits, and Techniques by Yue Fu,  Zhanming Li, Wai Tung Ng, and Johnny Okay.O. Si | PDF Free Download.

Integrated Power Devices and TCAD Simulation Contents


  • Chapter 1 Power Electronics, the Enabling Inexperienced Know-how
  • Chapter 2 Power Converters and Power Administration ICs
  • Chapter 3 Semiconductor Trade and Greater than Moore
  • Chapter 4 Sensible Power IC Know-how
  • Chapter 5 Introduction to TCAD Course of Simulation
  • Chapter 6 Introduction to TCAD Gadget Simulation
  • Chapter 7 Power IC Course of Circulate with TCAD Simulation
  • Chapter 8 Integrated Power Semiconductor Devices with TCAD Simulation
  • Chapter 9 Integrated Power Semiconductor Devices with 3D TCAD Simulations
  • Chapter 10 GaN Devices, an Introduction

Preface to Integrated Power Devices and TCAD Simulation


Ever because the invention of the transistor within the late 1940s, the event of transistors adopted in two main instructions: gadget miniaturization and efficiency enchancment.

One of many key parameters for efficiency enchancment is clearly the facility ranking of the transistor, with the event that resulted within the space of energy semiconductors.

As a result of all electrical gadgets require a provide of energy and energy administration electronics for correct operation, energy semiconductors are an essential space of transistor improvement over the previous a long time.

In recent times, gadget miniaturization has allowed the minimal function measurement to strategy the nanoscale, and current ultra-large-scale integration (ULSI) know-how is able to placing billions of transistors onto a single chip.

This causes severe issues in powering up the chips. Moreover, increased energy effectivity required attributable to environmental points additionally places a heavy burden on the facility administration and energy electronics a part of the system.

These and different associated points spur continued analysis into the world of energy semiconductor gadgets and know-how. Within the space of energy semiconductor improvement, the main target was first on discrete energy gadgets for high-power scores.

Typical buildings have been energy bipolar transistors and thyristors. As a result of gradual switching velocity and excessive switching lack of these gadgets, a quick switching gadget such because the vertical double-diffused MOS (VDMOS) transistor was invented, and lastly, for general decrease energy loss, the insulated-gate bipolar transistor (IGBT) was created.

As built-in circuit (IC) know-how turned extra fashionable, there was a push to combine energy transistors with management IC for low-cost, compact, and high-performance purposes.

To perform this, lateral double-diffused MOS (LDMOS) transistors and lateral insulated-gate bipolar transistors (LGBTs) have been developed.

That was the golden age for the event of the facility IC (PIC) know-how, and varied sorts of bipolar-CMOS-DMOS (BCD) applied sciences have been developed.

With right now’s well-developed ULSI and PIC applied sciences, it’s envisaged that the event of an influence system-on-a-chip (PowerSOC) for future client and industrial purposes might be a really promising route.

In fact, to make {that a} actuality, varied different applied sciences for reaching high-performance monolithic passive parts corresponding to environment friendly passive and IC integration and efficient energy dissipation may also be wanted.

Each high-performance lateral energy transistors and course of applied sciences are essential to develop PIC applied sciences.

For the environment friendly design of semiconductor gadgets and course of applied sciences, know-how computer-aided design (TCAD) instruments are generally used within the business.

Some books have already been revealed on energy gadget design and know-how improvement, however none significantly deal with learn how to use TCAD instruments to design and develop energy gadgets and PICs.

It’s the objective of this e-book to cowl this want and particularly to offer engineers who’re new to the sphere of energy semiconductors a fast begin on gadget and know-how design and improvement utilizing TCAD instruments.

The e-book adopts a top-down strategy to introduce new engineers to the sphere. It begins with fundamental energy electronics methods and an introduction to energy ICs and guides the reader to discover the semiconductor business earlier than moving into sensible energy IC know-how.

It then goes on to elucidate the fundamentals of TCAD modeling for course of and gadget simulation. Mannequin calibration for particular fabrication services for correct and dependable simulation outcomes are additionally mentioned.

Particulars on learn how to use TCAD instruments for energy IC course of improvement and energy gadget designs are then launched.

This contains many simulation examples on TCAD methodology and procedures for the economic design of sensible energy gadgets and course of applied sciences. Greater than 300 diagrams successfully illustrate the important thing ideas and strategies for energy gadget and know-how design.

Lastly, a short introduction to GaN energy gadgets is offered with TCAD simulations to offer readers, particularly these with a silicon-only background, a head begin on this discipline.

In the middle of penning this e-book, the authors have acquired substantial assist and help from many people.

We want to acknowledge and prolong our heartfelt gratitude to every of them for all their beneficiant assist and help.

Specifically, we want to thank Michel Lestrade from Crosslight Software program, who has made important contributions to the assessment and proofreading; Professor Maggie Xia and Dr. Yuanwei Dong from the College of British Columbia, for his or her opinions of the method simulations in Chapter 7 and different chapters.

Professor Gang Xie from Zhejiang College, for his contributions to the GaN gadget simulations and assessment in Chapter 10; Robert Taylor, chief government officer of MegaHertz Power Techniques Ltd., and Dr. Roumen Petkov from Greecon Applied sciences Ltd.

for his or her opinions and solutions of Chapter 1; Dr. Gary Dolny from Fairchild Semiconductor (USA) and Professor John Shen of the Illinois Institute of Know-how for his or her helpful preliminary opinions and solutions.

Lastly, we want to give our particular because of Nora Konopka, Michele Smith, Kathryn Everett, Iris Fahrer, and Theresa Delforn from Taylor & Francis for his or her skilled help and form assist.

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